Overview

Kolmar Technologies offers several models of low noise amplifiers matched to a detector series to obtain a minimum noise figure and maximum D*. HgCdTe photoconductors require amplifiers with minimum noise figure at 50 ohms input. Very high impedance detectors, such as InSb photodiodes, require amplifiers with minimum current noise.

All of our amplifiers include a detector biasing circuit to optimize the detector for its particular application. With slight reverse bias, infrared photodiodes have a square root of 2 improvement in detectivity. Bias eliminates excess noise and reduces junction capacitance to increase bandwidth and improve D* at high frequencies. Bias is also a factor in linearity and dynamic range.

Model

     Type

     Gain

  Bandwidth

     Output

KA020-A1A

  TIA + bias

  1E4 V/A

 100 Hz – 20MHz

       20V p-p

KA020-A1

  TIA + bias

  1E4 V/A

 DC – 20 MHz

       20 V p-p

KA050-A1

  TIA + bias

  4E3 V/A

 DC – 50 MHz

       3 V p-p

KA100-A1

  TIA + bias

 4E3 V/A

 DC – 100 MHz

       3 V p-p

Model

     Type

    Gain

  Bandwidth

     Output

KA-S3

  TIA + bias

 1E4/Rd V/V

 20 Hz – 300 kHz

       3 V rms

KA-S4

  TIA + bias

 1E4/Rd V/V

 20 Hz – 500 kHz

       3 V rms

KA-S5

  TIA + bias

 1E4/Rd V/V

 20 Hz – 1 MHz

       3 V rms

Model

      Type

    Gain

  Bandwidth

     Output

KA020-C1

    TIA + bias

   1E4 V/A

  DC – 10 MHz

       10 V p-p

KA05-C1

    TIA + bias

   5E4 V/A

  DC – 5 MHz

       10 V p-p

KA03-C1

    TIA + bias

   1E5 V/A

  DC – 3 MHz

       10 V p-p

KA01-E6-AG

    Adj. gain

1-2-5-10 step+bias

1E5 – 1E7 V/A

  DC – 1 MHz

       10 V p-p

Model

      Type

    Gain

  Bandwidth

      Output

KA100-E1

       Buffer

   1 V/V

  DC – 100 MHz*

        20 V p-p

KA100-E2

       Buffer

   20 V/V

  DC – 100 MHz*

        20 V p-p

KA100-E3

       Buffer

   2 V/V

  DC – 100 Hz*

        20 V p-p